N. Taylor

Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1

Osman Gürdal, P. Desjardins, Jan‐Otto Carlsson et al. · Journal of Applied Physics · 1998 · 133 citations

Engineering, Low-temperature Growth, Thin Film Process Technology +17

Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening

T. R. Bramblett, Qi Lu, N.-E. Lee et al. · Journal of Applied Physics · 1995 · 52 citations

Materials Science, Epitaxial Growth, Surface Roughening +14

Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy

Marlon Rojas‐López, H. Navarro‐Contreras, P. Desjardins et al. · Journal of Applied Physics · 1998 · 44 citations

Materials Engineering, Materials Science, Total Frequency Shift +12

Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy

Honggyu Kim, N. Taylor, John R. Abelson et al. · Journal of Applied Physics · 1997 · 34 citations

Materials Engineering, Semiconductors, Epitaxial Growth +15

Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6

Hyunbin Kim, N. Taylor, T. R. Bramblett et al. · Journal of Applied Physics · 1998 · 34 citations

Materials Science, Materials Engineering, Deposition Rate Rsige +12