F. Yeung

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 139 citations

Engineering, Electrical Engineering, Materials Science +10

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +14

Writing current reduction for high-density phase-change RAM

Y.N. Hwang, Sojung Lee, S.J. Ahn et al. · 2004 · 85 citations

Engineering, Electrical Engineering, Materials Science +16

Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)

Dahyun Kang, Ji‐Yeon Kim, Yoonsuk Kim et al. · 2007 · 16 citations

Engineering, Electrical Engineering, Materials Science +13

Unravel crystallization kinetics of V(V) electrolytes for all-vanadium redox flow battery by in situ Raman spectroscopy

Zaoyan Wan, Site Li, Ping Chen et al. · Advanced Composites and Hybrid Materials · 2023 · 15 citations

Natural Sciences, Chemical Engineering, Materials Science +16