T. Torunski - Concepedia

Author

T. Torunski

Philipps University of Marburg

Also Known As

T. Torunski, Thorsten Torunski, Torsten Torunski, Torunski, T., Torunsky, T.

Publications

254

Citations

H-Index

Concepts

All Affiliations

Philipps University of Marburg

About

T. Torunski is an author at Philipps University of Marburg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	175
2	Applied Physics	8	8	175
3	Natural Sciences	3	3	65
4	Chemistry	2	2	22
5	Electrical Engineering	1	1	27

T. Torunski

Publications

220

Citations

H-Index

Page 1

	Year	Citations
Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation Peter J. Klar, H. Grüning, M. Güngerich, Physical review. B, Condensed matter	2003	45
Anisotropy of the magnetotransport in (Ga,Mn)As/MnAs paramagnetic-ferromagnetic hybrid structures S. Ye, Peter J. Klar, Th. Hartmann, Applied Physics Letters Materials ScienceMagnetismFerromagnetismSpintronicsEngineering	2003	43
Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys Oleg Rubel, Kerstin Volz, T. Torunski, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideEngineeringPhysics	2004	36
Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures Kerstin Volz, T. Torunski, David Lackner, Journal of Solar Energy Engineering Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringSolar Cell Structures	2006	27
Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE M. Lampalzer, Kerstin Volz, W. Treutmann, Journal of Crystal Growth Materials ScienceMagnetismFerromagnetismSpintronicsEngineering	2002	22
Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy Shinjiro Hara, M. Lampalzer, T. Torunski, Journal of Crystal Growth Materials ScienceMagnetismMagnetic PropertiesFerromagnetismEngineering	2003	14
Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing Kerstin Volz, T. Torunski, Oleg Rubel, Journal of Applied Physics EngineeringCrystal Growth TechnologyChemistryThermal AnnealingN-iii Bonding	2008	11
Nanoanalytical quantification of the nitrogen content in Ga(NAs)∕GaAs by using transmission electron microscopy in combination with refined structure factor calculation Kerstin Volz, Oleg Rubel, T. Torunski, Applied Physics Letters X-ray CrystallographyCrystal StructureEngineeringTransmission Electron MicroscopyStatic Displacements	2006	11
Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures L. Gottwaldt, K. Pierz, F. J. Ahlers, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringOptoelectronic DevicesElectronic Properties	2003	11

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