Xiujian Sun

High-Voltage and High-I_ON/I_OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Xiaolu Guo, Yaozong Zhong, Junlei He et al. · IEEE Electron Device Letters · 2021 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Xiaolu Guo, Yaozong Zhong, Xin Chen et al. · Applied Physics Letters · 2021 · 59 citations

Engineering, Electrical Engineering, Materials Engineering +17

AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate

Fangzhou Liang, Meixin Feng, Yingnan Huang et al. · Optics Express · 2020 · 39 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm²

Xiaolu Guo, Yaozong Zhong, Yu Zhou et al. · IEEE Transactions on Electron Devices · 2021 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Continuous-wave electrically injected GaN-on-Si microdisk laser diodes

Jin Wang, Meixin Feng, Rui Zhou et al. · Optics Express · 2020 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17