J.P. Long

Thermal evolution and electrical correlation of defect states in Hf-based high-κ dielectrics on n-type Ge (100): Local atomic bonding symmetry

K. B. Chung, J.P. Long, Hyungtak Seo et al. · Journal of Applied Physics · 2009 · 39 citations

Natural Sciences, Materials Science, Physics +17

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

G. Lucovsky, S. Lee, J.P. Long et al. · Applied Surface Science · 2008 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH[sub 4]OH-Based Cleaning for High-k∕Ge MOS Gate Stacks

H. Seo, Kwun‐Bum Chung, J.P. Long et al. · Journal of The Electrochemical Society · 2009 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

K. B. Chung, Hyungtak Seo, J.P. Long et al. · Applied Physics Letters · 2008 · 17 citations

Natural Sciences, Materials Science, Physics +17

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

G. Lucovsky, S. Lee, J.P. Long et al. · Microelectronic Engineering · 2008 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +17