Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition

Yu Kang, Chang Sik Kim, M. H. Cho, +6

Applied Physics Letters

Materials ScienceHfo2 FilmsCrystal StructureMaterial AnalysisThickness Dependence +12

Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Byung Du Ahn, Jin‐Seong Park, K. B. Chung

Applied Physics Letters

Materials ScienceRoom TemperatureElectrical EngineeringIgzo TftEngineering +12

Thermal evolution and electrical correlation of defect states in Hf-based high-κ dielectrics on n-type Ge (100): Local atomic bonding symmetry

K. B. Chung, J.P. Long, Hyungtak Seo, +2

Journal of Applied Physics

EngineeringElectrical CorrelationDefect StatesThermal EvolutionX-ray Absorption Spectroscopy +16

Change in band alignment of HfO2 films with annealing treatments

C. J. Yim, D.-H. Ko, Moon Hyung Jang, +3

Applied Physics Letters

EngineeringBand GapHfo2 FilmsIi-vi SemiconductorChemical Engineering +14

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

Chang Sik Kim, Sang Wan Cho, M.-H. Cho, +5

Applied Physics Letters

EngineeringSemiconductorsHfo2 FilmsSurface StateMolecular Beam Epitaxy +14

Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

B. K. Kim, Jin-Seok Park, D. H. Kim, +1

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringOxygen Coordination +12

Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

M.-H. Cho, K. B. Chung, Dae Won Moon

Applied Physics Letters

EngineeringSolid-state ChemistryChemistryNitrided Xhfo2Electronic Structure +17

Suppression of phase separation in Hf-silicate films using NH3 annealing treatment

K. B. Chung, C. N. Whang, M.-H. Cho, +2

Applied Physics Letters

Nh3 Annealing TreatmentEngineeringSio2 OverlayerThin Film Process TechnologySilicon On Insulator +14

Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing

M.-H. Cho, K. B. Chung, Hyo Sik Chang, +10

Applied Physics Letters

EngineeringThin Film Process TechnologyChemical DepositionChemical EngineeringCorrosion +16

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

Chang Sik Kim, Sang Wan Cho, M.-H. Cho, +6

Applied Physics Letters

Materials ScienceSemiconductorsEnergy Band GapCrystal StructureEngineering +13