K. Kobayashi

A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films

S. Pidin, Toshihiko Mori, K. Inoue et al. · 2005 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement

Suguru Ito, Baojie Feng, Masashi Arita et al. · Physical Review Letters · 2016 · 89 citations · Full text

Natural Sciences, Materials Science, Physics +16

Theoretical support to the double-layer model for potassium adsorption on the Si(001) surface

Yoshitada Morikawa, K. Kobayashi, K. Terakura et al. · Physical review. B, Condensed matter · 1991 · 52 citations

Natural Sciences, Chemistry, Materials Science +17

Role of Quantum and Surface-State Effects in the Bulk Fermi-Level Position of Ultrathin Bi Films

Toru Hirahara, Tomohiro Shirai, Tetsuya Hajiri et al. · Physical Review Letters · 2015 · 48 citations

Natural Sciences, Materials Science, Physics +17

Surface relaxation of topological insulators: Influence on the electronic structure

Naoya Fukui, Toru Hirahara, Tetsuroh Shirasawa et al. · Physical Review B · 2012 · 46 citations

Natural Sciences, Materials Science, Physics +17