Kazuhisa Koyama

Selective heteroepitaxial growth of Si1−<i>x</i>Ge<i>x</i> using gas source molecular beam epitaxy

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama et al. · Applied Physics Letters · 1990 · 40 citations

Engineering, Materials Engineering, Materials Science +14

Gas source Si-MBE

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama et al. · Journal of Crystal Growth · 1990 · 34 citations

Intensity oscillations in reflection high-energy electron diffraction during disilane gas source molecular beam epitaxy

Masayuki Hiroi, Kazuhisa Koyama, Toru Tatsumi et al. · Applied Physics Letters · 1992 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +17

Heterojunction bipolar transistor fabrication using Si1−<i>x</i>Ge<i>x</i> selective epitaxial growth by gas source silicon molecular beam epitaxy

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama et al. · Applied Physics Letters · 1990 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Etching characteristics of Si1−<i>x</i>Ge<i>x</i> alloy in ammoniac wet cleaning

Kazuhisa Koyama, Masayuki Hiroi, Toru Tatsumi et al. · Applied Physics Letters · 1990 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +17