Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

Z. Sobiesierski, I. M. Dharmadasa, R. H. Williams

Applied Physics Letters

EngineeringPhotoluminescence MeasurementsChemistryElectronic PropertiesLuminescence Property +17

<i>In situ</i> monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Krikor Ozanyan, P. J. Parbrook, M. Hopkinson, +3

Journal of Applied Physics

Materials ScienceSurface CharacterizationEngineeringCrystalline DefectsMicroscopy +11

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Z. Sobiesierski, D.I. Westwood, C. C. Matthai

Journal of Physics Condensed Matter

EngineeringElectronic Properties RasSpectroscopic PropertySemiconductorsReflectance Anisotropy Spectroscopy +16

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

M. Capizzi, C. Coluzza, Valentina Emiliani, +6

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringIngaas/gaas Multiquantum WellsRadiative States +15

The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies

D. A. Woolf, Z. Sobiesierski, D.I. Westwood, +1

Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering +12

Photoluminescence spectroscopy of near-surface quantum wells: Electronic coupling between quantized energy levels and the sample surface

Z. Sobiesierski, D.I. Westwood, D. A. Woolf, +2

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Near-surface Quantum WellsEngineeringLuminescence PropertyPl IntensityGaas Surface Barrier +14

As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Z. Sobiesierski, D.I. Westwood, P. J. Parbrook, +3

Applied Physics Letters

EngineeringAbsorption SpectroscopyChemistrySpectroscopic PropertyReflectance Anisotropy Spectroscopy +16

Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy

E. Steimetz, J.‐T. Zettler, W. Richter, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Optical MaterialsEngineeringClean GaasOptical MonitoringSemiconductor Nanostructures +16

Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

Z. Sobiesierski, S. A. Clark, Rachel Williams, +6

Applied Physics Letters

Ii-vi SemiconductorElectrical EngineeringPhotoluminescenceStrained LayersEngineering +11

Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study

D.I. Westwood, Z. Sobiesierski, C. C. Matthai, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +14