Tao‐Hung Hsueh - Concepedia

Author

Tao‐Hung Hsueh

National Cheng Kung University

Also Known As

Tao-Hung Hsueh, Taohung Hsueh, Tao‐Hung Hsueh

Publications

261

Citations

H-Index

Concepts

All Affiliations

National Cheng Kung University National Formosa University National Yang Ming Chiao Tung University

About

Tao‐Hung Hsueh is an author at National Cheng Kung University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	214
2	Applied Physics	8	8	214
3	Electrical Engineering	4	4	127
4	Natural Sciences	1	1	50
5	Chemistry	1	1	50

Tao‐Hung Hsueh

Publications

214

Citations

H-Index

Page 1

	Year	Citations
Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching Chang-Chin Yu, Chen-Fu Chu, Juen-Yen Tsai, Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2002	69
Origins of efficient green light emission in phase-separated InGaN quantum wells Yen-Lin Lai, Chuan‐Pu Liu, Yung‐Hsiang Lin, Nanotechnology PhotonicsSolid-state LightingEngineeringPhotoluminescencePhysics	2006	50
Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks Tao‐Hung Hsueh, Hung‐Wen Huang, Chih-Chiang Kao, Japanese Journal of Applied Physics Ingan/gan Multiple QuantumEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices	2005	29
Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling Shang-En Wu, Chuan‐Pu Liu, Tao‐Hung Hsueh, Nanotechnology Wide-bandgap SemiconductorEngineeringCompetition PhenomenonNanoelectronicsMaterials Fabrication	2007	15
Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well Chii‐Chang Chen, Tao‐Hung Hsueh, Yi-Sheng Ting, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringDiffusion LengthOptoelectronic Devices	2001	15
Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling Shang-En Wu, Yu-Wen Huang, Tao‐Hung Hsueh, Japanese Journal of Applied Physics EngineeringIon ImplantationBeam LithographyNanoelectronicsIon Beam	2008	14
Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy Kuang-Wei Liu, Shoou-Jinn Chang, Sheng‐Joue Young, Journal of The Electrochemical Society Materials EngineeringMaterials ScienceCrystalline QualityWide-bandgap SemiconductorEngineering	2011	12
Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer Kuang-Wei Liu, Sheng‐Joue Young, Shoou‐Jinn Chang, Journal of Alloys and Compounds Materials ScienceEpitaxial GrowthEngineeringSurface ScienceApplied Physics	2011	10

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