V.Ya. Bratus - Concepedia

Author

V.Ya. Bratus

V.E. Lashkaryov Institute of Semiconductor Physics

Also Known As

T.L. Petrenko, V Bratus', V Ya Bratus, V. Bratus, V. Bratus', V. Bratus’, V. Y. Bratus', V. Ya. Bratus, V. Ya. Bratus', V. Ya. Bratus’

Publications

420

Citations

H-Index

Concepts

All Affiliations

V.E. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine Sorbonne Université Panasonic (Japan)University of Surrey

About

V.Ya. Bratus is an author at V.E. Lashkaryov Institute of Semiconductor Physics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	197
2	Applied Physics	7	7	184
3	Materials Science	3	3	125
4	Materials Engineering	2	2	65
5	Natural Sciences	1	1	55

V.Ya. Bratus

Publications

284

Citations

H-Index

Page 1

	Year	Citations
The carbon 100 split interstitial in SiC Taras Petrenko, T.L. Petrenko, V.Ya. Bratus Journal of Physics Condensed Matter EngineeringCarbon 100Electronic StructureSemiconductorsQuantum Materials	2002	55
Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers M. Ya. Valakh, V. A. Yukhimchuk, V.Ya. Bratus, Journal of Applied Physics Optical MaterialsParamagnetic ResonanceEngineeringOptoelectronic DevicesSilicon On Insulator	1999	50
Structural transformations and silicon nanocrystallite formation in SiOx films V.Ya. Bratus, V. A. Yukhimchuk, L. I. Berezhinsky, Semiconductors	2001	50
Positively charged carbon vacancy in 6H–SiC: EPR study V.Ya. Bratus, I.N. Makeeva, S. M. Okulov, Physica B Condensed Matter Semiconductor TechnologyApplied PhysicsCarbon Vacancy	2001	26
EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC V.Ya. Bratus, I.N. Makeeva, S. M. Okulov, Materials science forum EngineeringApplied PhysicsEpr StudyDefect FormationDefect Tolerance	2001	21
Functionalization of 2D macroporous silicon under the high-pressure oxidation V.P. Kladko, O. Gudymenko, Bo Wang, Applied Surface Science Materials ScienceEngineeringMicrofabricationSurface ScienceSemiconductor Device Fabrication	2017	20
A new spin one defect in cubic SiC V.Ya. Bratus, S. M. Okulov, V. N. Rodionov, Physica B Condensed Matter SpintronicsEngineeringPhysicsCondensed Matter PhysicsCubic Sic	2009	19
Electron spin resonance of boron in cubic SiC: manifestation of the Jahn-Teller effect N. P. Baran, V.Ya. Bratus, A. A. Bugaǐ, Physics of the Solid State SpintronicsBoron NitrideJahn-teller EffectEngineeringPhysics	1993	12
Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis V.Ya. Bratus, A. R. Luk’yanchuk, V. T. Maslyuk Technical Physics Letters	2008	11
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers V.Ya. Bratus, M.Ya. Valakh, I. P. Vorona, Journal of Luminescence PhotoluminescenceEngineeringPhysicsApplied PhysicsSemiconductor Device Fabrication	1998	10

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