Concepedia

I.N. Makeeva

IM

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Publications

2

Citations

47

H-Index

2

Active since

2001

Affiliations

V.E. Lashkaryov Institute of Semiconductor Physics(Current)

Sorbonne Université

I.N. Makeeva is an author at V.E. Lashkaryov Institute of Semiconductor Physics specializing in applied physics, engineering, and defect tolerance.

Top concepts

Publications per year

2001–2001

2

Publications

2

Positively charged carbon vacancy in 6H–SiC: EPR study

V.Ya. Bratus, I.N. Makeeva, S. M. Okulov et al. · Physica B Condensed Matter · 2001 · 26 citations

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EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC

V.Ya. Bratus, I.N. Makeeva, S. M. Okulov et al. · Materials science forum · 2001 · 21 citations

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