Statistics
Publications
2
Citations
47
H-Index
2
Active since
2001
Affiliations
I.N. Makeeva is an author at V.E. Lashkaryov Institute of Semiconductor Physics specializing in defects in electronic materials, physics, and semiconductor materials.
Publications per year
2001–2001
2
2
Positively charged carbon vacancy in 6H–SiC: EPR study
V.Ya. Bratus, I.N. Makeeva, S. M. Okulov et al. · Physica B Condensed Matter · 2001 · 26 citations
EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
V.Ya. Bratus, I.N. Makeeva, S. M. Okulov et al. · Materials science forum · 2001 · 21 citations · Full text
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