C. Chao

Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond

Jerry C. Hu, Hsiwen Yang, R. Kraft et al. · 2002 · 36 citations

Engineering, Gate Sheet Resistance, Thin Gate Dielectrics +16

A 0.10 μm gate length CMOS technology with 30 Å gate dielectric for 1.0 V-1.5 V applications

M. Rödder, Maureen A. Hanratty, D. Rogers et al. · 2002 · 29 citations

Low-power Electronics, V-1.5 V Applications, Electrical Engineering +9

Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators

C. Chao, R.L. Bernick, E.M. Nakaji et al. · IEEE Transactions on Microwave Theory and Techniques · 1977 · 20 citations

Electrical Engineering, Engineering, Radio Frequency +11

A Ka-Band GaAs Monolithic Phase Shifter

V. A. Sokolov, J. Geddes, A. Contolatis et al. · IEEE Transactions on Microwave Theory and Techniques · 1983 · 19 citations

Electrical Engineering, Sag Phase Shifter, Engineering +9

Ka-Band Monolithic GaAs Balanced Mixers

C. Chao, A. Contolatis, S.A. Jamison et al. · IEEE Transactions on Microwave Theory and Techniques · 1983 · 14 citations

Gaas Chip, Millimeter Wave Technology, Engineering +9