Haifeng Xu

A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells

Haifeng Xu, Kenneth K. O · IEEE Journal of Solid-State Circuits · 2007 · 78 citations

Low-power Electronics, Floated P-wells, Electrical Engineering +11

Numerical simulation and experiments of titanium alloy engine blades based on laser shock processing

Pengyang Li, Shikun Huang, Haifeng Xu et al. · Aerospace Science and Technology · 2014 · 47 citations

Advanced Laser Processing, Engineering, Mechanics +7

W-Band Active Down-Conversion Mixer in Bulk CMOS

Ning Zhang, Haifeng Xu, Hsin-Ta Wu et al. · IEEE Microwave and Wireless Components Letters · 2009 · 45 citations

76-77 Ghz, Engineering, Rf Semiconductor +13

High-$Q$ Thick-Gate-Oxide MOS Varactors With Subdesign-Rule Channel Lengths for Millimeter-Wave Applications

Haifeng Xu, Kenneth K. O · IEEE Electron Device Letters · 2008 · 27 citations

Engineering, Vlsi Design, Millimeter-wave Applications +17

An 18-GHz, 10.9-dbm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

Changhua Cao, Haifeng Xu, Yu Su et al. · 2005 · 25 citations

Electrical Engineering, Engineering, Rf Semiconductor +9