Reo Yamamoto

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Toru Kinoshita, Toru Nagashima, Toshiyuki Obata et al. · Applied Physics Express · 2015 · 84 citations

Engineering, Electrical Engineering, Materials Science +16

X-ray structures of eIF5B and the eIF5B–eIF1A complex: the conformational flexibility of eIF5B is restricted on the ribosome by interaction with eIF1A

Aiping Zheng, Jian Yu, Reo Yamamoto et al. · Acta Crystallographica Section D Biological Crystallography · 2014 · 23 citations

Life Sciences, Biochemistry, Molecular Biology +17

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Toru Nagashima, Reiko Ishikawa, Tatsuya Hitomi et al. · Journal of Crystal Growth · 2020 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +14

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Yoshinao Kumagai, Ken Goto, Toru Nagashima et al. · Applied Physics Express · 2022 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +17

Metal powder granulation in a plasma-spouted/fluidized bed

M. Tsukada, Ken Goto, Reo Yamamoto et al. · Powder Technology · 1995 · 18 citations

Engineering, Manufacturing Engineering, Materials Engineering +14