Hongjia He - Concepedia

Author

Hongjia He

Also Known As

H.J. He, Hongjia He

Publications

144

Citations

H-Index

Concepts

All Affiliations

Hongjia He is an author at Institute of Semiconductors specializing in applied physics, engineering, and electrical engineering.

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	138
2	Applied Physics	6	6	138
3	Electrical Engineering	5	5	69
4	Materials Engineering	2	2	30
5	Natural Sciences	1	1	11

Hongjia He

Publications

138

Citations

H-Index

Page 1

	Year	Citations
Effects of point defects on lattice parameters of semiconductors Nuofu Chen, Yutian Wang, Hongjia He, Physical review. B, Condensed matter SemiconductorsMaterials ScienceIi-vi SemiconductorEpitaxial GrowthPoint Defects	1996	69
MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique Junling Yang, Nuofu Chen, Zhikai Liu, Journal of Crystal Growth Materials EngineeringElectrical EngineeringIon ImplantationEngineeringApplied Physics	2001	19
Stoichiometric defects in semi-insulating GaAs Nuofu Chen, Hongjia He, Yutian Wang, Journal of Crystal Growth SemiconductorsSemi-insulating GaasElectrical EngineeringEngineeringApplied Physics	1997	15
Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide Lanying Lin, Nuofu Chen, Xingru Zhong, Journal of Applied Physics Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringPhysics	1998	12
(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition Junling Yang, Nuofu Chen, Zhikai Liu, Journal of Crystal Growth Materials ScienceElectrical EngineeringEngineeringApplied PhysicsMolecular Beam Epitaxy	2002	12
Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method Nuofu Chen, Yutian Wang, Hongjia He, Applied Physics Letters X-ray CrystallographyX-ray SpectroscopyEngineeringElectron SpectroscopyNondestructive Measurements	1996	11

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