Concepedia

Hongjia He

HH

6

Publications

138

Citations

6

H-Index

1996

Active since

Affiliations

Institute of Semiconductors(Current)

Chinese Academy of Sciences

Hongjia He is an author at Institute of Semiconductors specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial ScienceCondensed Matter PhysicsPhysicsSemiconductorsMicroelectronicsQuantum MaterialsMaterials Engineering

Publications per year

1996–2002

6

Publications

6

Effects of point defects on lattice parameters of semiconductors

Nuofu Chen, Yutian Wang, Hongjia He et al. · Physical review. B, Condensed matter · 1996 · 69 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +13

MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

Junling Yang, Nuofu Chen, Zhikai Liu et al. · Journal of Crystal Growth · 2001 · 19 citations

Materials Engineering, Electrical Engineering, Ion Implantation +6

Stoichiometric defects in semi-insulating GaAs

Nuofu Chen, Hongjia He, Yutian Wang et al. · Journal of Crystal Growth · 1997 · 15 citations

Semiconductors, Semi-insulating Gaas, Electrical Engineering +7

Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide

Lanying Lin, Nuofu Chen, Xingru Zhong et al. · Journal of Applied Physics · 1998 · 12 citations

Materials Science, Electrical Engineering, Epitaxial Growth +13

(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition

Junling Yang, Nuofu Chen, Zhikai Liu et al. · Journal of Crystal Growth · 2002 · 12 citations · Full text

Materials Science, Electrical Engineering, Engineering +5

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