Publication | Closed Access
MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
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Citations
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References
2001
Year
Materials EngineeringElectrical EngineeringIon ImplantationEngineeringApplied PhysicsSemiconductor Device FabricationIon BeamSilicon On InsulatorMnsi∼1.73 Grown
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