Wei-Chou Wang - Concepedia

Author

Wei-Chou Wang

National Cheng Kung University

Also Known As

Wang, Wei-Chou Wang

Publications

135

Citations

H-Index

Concepts

All Affiliations

National Cheng Kung University National Taiwan Ocean University

About

Wei-Chou Wang is an author at National Cheng Kung University specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	79
2	Applied Physics	5	5	79
3	Electrical Engineering	5	5	79
4	Electronic Devices	4	4	69
5	Integrated Circuits	2	2	37

Wei-Chou Wang

Publications

119

Citations

H-Index

Page 1

	Year	Citations
High-performance InGaP/InGaAs/GaAs step-compositioneddoped-channel field-effect transistor (SCDCFET) Lih-Wen Laih, Shiou‐Ying Cheng, Wei-Chou Wang, Electronics Letters	1997	40
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors Wen‐Shiung Lour, Wen-Lung Chang, Wen-Chau Liu, Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1999	22
Investigation of temperature-dependent performances of InP/In<sub>0.53</sub>Ga<sub>0.34</sub>Al<sub>0.13</sub>As heterojunction bipolar transistors Hsi-Jen Pan, Wei-Chou Wang, Kong-Beng Thei, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2000	18
Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs Pseudomorphic Transistors Wen-Lung Chang, Hsi-Jen Pan, Wei-Chou Wang, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1999	15
High-performance double delta-doped sheets Ga<sub>0.51</sub>In<sub>0.49</sub>P/In<sub>0.15</sub>Ga<sub>0.85</sub>As/ Ga<sub>0.51</sub>In<sub>0.49</sub>P pseudomorphic heterostructure transistors Wen-Lung Chang, Hsi-Jen Pan, Wei-Chou Wang, Semiconductor Science and Technology SemiconductorsGood DcElectrical EngineeringElectronic DevicesEngineering	1999	14
Influence of the -doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor Shiou‐Ying Cheng, Hsi-Jen Pan, Yung-Hsin Shie, Semiconductor Science and Technology Electrical EngineeringSemiconductor DeviceEngineeringAppropriate Setback LayerRf Semiconductor	1998	10

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