J. Schumann - Concepedia

Author

J. Schumann

Leibniz Institute for Solid State and Materials Research

Also Known As

J Schumann, J. SCHUMANN, J. Schumann, Jan-Peter Schümann, Schumann J., Schumann, J.

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for Solid State and Materials Research Leibniz Institute for Neurobiology Belarusian State University of Informatics and Radioelectronics Leibniz Association Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

About

J. Schumann is an author at Leibniz Institute for Solid State and Materials Research specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	30	1.1K
2	Applied Physics	17	29	991
3	Natural Sciences	8	8	243
4	Medicine	1	1	60
5	Biomedical Engineering	1	1	60

J. Schumann

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers Gilles Pernot, M. Stoffel, Ivana Savić, Nature Materials	2010	367
Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm M. Kund, G. Beitel, C. U. Pinnow, Materials ScienceMemory TechnologyElectrical EngineeringNon-volatile MemoryEngineering	2006	248
Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-FeSi2+x thin films A. Heinrich, H. Grießmann, G. Behr, Thin Solid Films Materials Scienceβ-Fesi2+x Thin FilmsEngineeringOxide Electronicsβ-Fesi2 Single Crystals	2001	87
Electronic properties of semiconducting silicides: fundamentals and recent predictions L. Ivanenko, Leo Miglio, G. Behr, Thin Solid Films SemiconductorsEngineeringPhysicsNanoelectronicsNatural Sciences	2004	74
The metal-semiconductor transition in amorphous Si<sub>1-x</sub>Cr<sub>x</sub>films. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T<sub>0</sub>(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region A. Möbius, H. Vinzelberg, C. Gladun, Journal of Physics C Solid State Physics EngineeringSemiconductor PhysicsThin Film Process TechnologyMinimum Metallic ConductivitySemiconductors	1985	61
Iron filled carbon nanotubes as novel monopole-like sensors for quantitative magnetic force microscopy Franziska Wolny, Thomas Mühl, Kamil Lipert, Nanotechnology Conventional Mfm ProbesEngineeringMicroscopyMagnetic ResonanceNovel Monopole-like Sensors	2010	60
Enhanced magnetoresistance of permalloy/Al-oxide/cobalt tunnel junctions in the Coulomb blockade regime H. Brückl, G. Reiss, H. Vinzelberg, Physical review. B, Condensed matter Magnetic PropertiesEngineeringLow-dimensional MagnetismMagnetic ResonanceTunnel Junctions	1998	49
Floating zone growth and characterization of semiconducting Ru2Si3 single crystals D. Souptel, G. Behr, L. Ivanenko, Journal of Crystal Growth Materials ScienceEngineeringCrystal MaterialCrystal Growth TechnologyApplied Physics	2002	44
Effect of Néel coupling on magnetic tunnel junctions S. Tegen, Ingolf Mönch, J. Schumann, Journal of Applied Physics Magnetic PropertiesTmr CurvesEngineeringMagnetic ResonanceDipolar Magnetic Coupling	2001	40
The metal-semiconductor transition in amorphous Si<sub>1-x</sub>Cr<sub>x</sub>films-scaling behaviour and minimum metallic conductivity A. Möbius, D. Elefant, A. Heinrich, Journal of Physics C Solid State Physics Materials ScienceSemiconductorsMaterials EngineeringCr ContentEngineering	1983	34

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