Concepedia

Author

M. Stoffel

Max Planck Institute for Solid State ResearchORCID

Also Known As

M Stoffel, M. STOFFEL, M. Stoffel, M.C. Stoffel, Mathieu Stoffel, Stoffel, M., Stoffel, Mathieu

150

Publications

3K

Citations

28

H-Index

74

Concepts

All Affiliations

Max Planck Institute for Solid State ResearchCentre National de la Recherche ScientifiqueInstitut Jean LamourUniversité de LorraineLeibniz Institute for Solid State and Materials Research
MS

About

M. Stoffel is an author at Max Planck Institute for Solid State Research specializing in engineering, applied physics, and materials science.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

26

50

1.9K

2

Applied Physics

26

49

1.9K

3

Natural Sciences

4

4

91

4

Medicine

1

1

34

5

Chemical Engineering

1

1

24

M. Stoffel

×

64

Publications

2.5K

Citations

27

H-Index

YearCitations

Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

Gilles Pernot, M. Stoffel, Ivana Savić,

Nature Materials

2010

367

Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Georgios Katsaros, Panayotis Spathis, M. Stoffel,

Nature Nanotechnology

2010

155

Probing the Lateral Composition Profile of Self-Assembled Islands

U. Denker, M. Stoffel, Oliver G. Schmidt

Physical Review Letters

2003

114

Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography

Armando Rastelli, M. Stoffel, Ângelo Malachias,

Nano Letters

2008

112

Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets

Yongfeng Mei, Dominic J. Thurmer, Christoph Deneke,

ACS Nano

2009

94

Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying

U. Denker, Armando Rastelli, M. Stoffel,

Physical Review Letters

2005

94

Kinetic origin of island intermixing during the growth of Ge on Si(001)

Georgios Katsaros, Giovanni Costantini, M. Stoffel,

Physical Review B

2005

79

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

J. J. Zhang, M. Stoffel, Armando Rastelli,

Applied Physics Letters

2007

66

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

T. K. P. Luong, Minh Tuan Dau, M.A. Zrir,

Journal of Applied Physics

2013

65

Ge hut cluster luminescence below bulk Ge band gap

U. Denker, M. Stoffel, Oliver G. Schmidt,

Applied Physics Letters

2003

59

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