Young Ha Kwon

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Soohyun Bae, Jong‐Heon Yang, Yong-Hae Kim et al. · ACS Applied Materials & Interfaces · 2022 · 25 citations

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Seo-Hyun Moon, Soohyun Bae, Young Ha Kwon et al. · ACS Applied Electronic Materials · 2021 · 24 citations

Engineering, Thin Film Process Technology, Semiconductor Device +19

Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors

Soohyun Bae, Seo-Hyun Moon, Young Ha Kwon et al. · Journal of Alloys and Compounds · 2022 · 15 citations

Electrical Engineering, Engineering, Applied Physics +5

Improvement in Short-Channel Effects and Bias-Stress Stability of Vertical Thin-Film Transistors Using Atomic-Layer-Deposited In–Ga–Sn–O Channels

Shin-Ho Noh, Hyoeun Kim, Young Ha Kwon et al. · ACS Applied Electronic Materials · 2023 · 14 citations

Materials Science, Bias Stress Field, Electrical Engineering +15