V.J. Law

Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

M. Tewordt, L. Marti ́n-Moreno, J. T. Nicholls et al. · Physical review. B, Condensed matter · 1992 · 70 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Charge Excitations +17

Direct experimental determination of the tunnelling time and transmission probability of electrons through a resonant tunnelling structure

M. Tewordt, V.J. Law, Michael J. Kelly et al. · Journal of Physics Condensed Matter · 1991 · 60 citations

Quantum Science, Electrical Engineering, Engineering +14

Resonant tunneling in coupled quantum dots

M. Tewordt, H. Asahi, V.J. Law et al. · Applied Physics Letters · 1992 · 38 citations · Full text

Wide-bandgap Semiconductor, Engineering, Cavity Qed +18

Alkane based plasma etching of GaAs

V.J. Law, M. Tewordt, S. G. Ingram et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 29 citations

Electrical Engineering, Chemical Engineering, Engineering +15

Vertical tunneling between two quantum dots in a transverse magnetic field

M. Tewordt, R. J. F. Hughes, L. Martı́n-Moreno et al. · Physical review. B, Condensed matter · 1994 · 21 citations

Categoryquantum Electronics, Engineering, Fine Structure +19