S. Watahiki

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Masahiko Kondow, K. Uomi, T. Kitatani et al. · Journal of Crystal Growth · 1996 · 117 citations

Wide-bandgap Semiconductor, Physics, Applied Physics +3

GaNAs grown by gas source molecular beam epitaxy

Masahiko Kondow, K. Uomi, A. Niwa et al. · Solid-State Electronics · 1997 · 26 citations

Electrical Engineering, Engineering, Applied Physics +2

A Novel Material of GaInNAs for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

Masahiko Kondow, K. Uomi, A. Niwa et al. · 1995 · 20 citations

Materials Science, Photonics, Long-wavelength-range Laser Diodes +7

GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off

Y. Yazawa, K. Tamura, S. Watahiki et al. · Solar Energy Materials and Solar Cells · 1998 · 18 citations

Ii-vi Semiconductor, Electrical Engineering, Epitaxial Lift-off +11

Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer

Y. Yazawa, J. Minemura, K. Tamura et al. · Solar Energy Materials and Solar Cells · 1998 · 15 citations

Electrical Engineering, Epitaxial Growth, Engineering +8