K. Y. Zang

Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates

Lianshan Wang, K. Y. Zang, S. Tripathy et al. · Applied Physics Letters · 2004 · 55 citations

Materials Engineering, Si Dopant, Electrical Engineering +15

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Y. D. Wang, K. Y. Zang, S. J. Chua et al. · Applied Physics Letters · 2005 · 55 citations

Materials Science, Gan Template, Wide-bandgap Semiconductor +13

Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

K. Y. Zang, Y. D. Wang, S. J. Chua et al. · Applied Physics Letters · 2005 · 47 citations

Materials Science, Engineering, Dislocation Interaction +11

Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (111)

K. Y. Zang, Lianshan Wang, S. J. Chua et al. · Journal of Crystal Growth · 2004 · 43 citations

Materials Science, Materials Engineering, Surface Characterization +10

Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)

K. Y. Zang, Y. D. Wang, S. J. Chua et al. · Applied Physics Letters · 2006 · 35 citations

Materials Science, Semiconductors, Electrical Engineering +15