Lianshan Wang

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Xianglin Liu, Yude Zan et al. · Applied Physics Letters · 1998 · 83 citations

Materials Science, Semiconductors, Electrical Engineering +12

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

A. P. Vajpeyi, S. J. Chua, S. Tripathy et al. · Electrochemical and Solid-State Letters · 2005 · 60 citations

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Guijuan Zhao, Lianshan Wang, Shaoyan Yang et al. · Scientific Reports · 2016 · 58 citations · Full text

Competitive growth mechanisms of AlN on Si (111) by MOVPE

Yuxia Feng, Hongyuan Wei, Shaoyan Yang et al. · Scientific Reports · 2014 · 56 citations · Full text

Inelastic x-ray scattering study on the single excitations of helium

Lin‐Fan Zhu, Lianshan Wang, B. P. Xie et al. · Journal of Physics B Atomic Molecular and Optical Physics · 2011 · 55 citations

X-ray Spectroscopy, Engineering, Electron Diffraction +17