Shih-Ping Hong

Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP)

Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao et al. · 2009 · 28 citations

Engineering, Computer Engineering, Electrical Engineering +17

Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

Tzu‐Hsuan Hsu, Hang-Ting Lue, Chih-Chang Hsieh et al. · 2009 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3

Sheng-Chih Lai, Hang-Ting Lue, Chien-Wei Liao et al. · 2008 · 12 citations

Engineering, Electrical Engineering, Materials Science +17

A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface

Szu-Yu Wang, Hang-Ting Lue, Tzu‐Hsuan Hsu et al. · 2010 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17