N. Layadi - Concepedia

Author

N. Layadi

École Polytechnique

Also Known As

N Layadi, N. Layadi, Nacer Layadi

Publications

864

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Centre National de la Recherche Scientifique Laboratoire de Physique des Interfaces et des Couches Minces

About

N. Layadi is an author at École Polytechnique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	18	800
2	Applied Physics	14	18	800
3	Chemistry	3	3	140
4	Natural Sciences	2	2	50
5	Chemical Engineering	1	1	33

N. Layadi

Publications

800

Citations

H-Index

Page 1

	Year	Citations
Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences P. Roca i Cabarrocas, N. Layadi, T. Heitz, Applied Physics Letters Substrate SelectivityMiniaturizationEngineeringThin Film Process TechnologySilicon On Insulator	1995	156
Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment N. Layadi, Pere Roca i Cabarrocas, B. Drévillon, Physical review. B, Condensed matter EngineeringSilicon DepositionSilicon On InsulatorHydrogen Plasma TreatmentMicrocrystalline Silicon	1995	137
Cl 2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy N. Layadi, Vincent M. Donnelly, J. T. C. Lee Journal of Applied Physics EngineeringChemistrySilicon On InsulatorPlasma ProcessingSemiconductors	1997	83
Plasma deposition of microcrystalline silicon: the selective etching model I. Solomon, B. Drévillon, Hajime Shirai, Journal of Non-Crystalline Solids EngineeringMicrofabricationApplied PhysicsMicrocrystalline SiliconSilicon On Insulator	1993	63
Role of mobile hydrogen in the amorphous silicon recrystallization C. Godet, N. Layadi, Pere Roca i Cabarrocas Applied Physics Letters EngineeringDense Nanocrystalline SiliconSilicon On InsulatorPlasma ProcessingSteady State	1995	59
Cl2 plasma etching of Si(100): Damaged surface layer studied by <i>in situ</i> spectroscopic ellipsometry N. Layadi, Vincent M. Donnelly, J. T. C. Lee, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringElectrical EngineeringCrystalline SiliconEngineering	1997	41
Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms Pere Roca i Cabarrocas, N. Layadi, B. Drévillon, Journal of Non-Crystalline Solids Materials ScienceEngineeringMicrofabricationMicrocrystalline Silicon GrowthCrystal Growth Technology	1996	39
Halogen uptake by thin SiO2 layers on exposure to HBr/O2 and Cl2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy V. M. Donnelly, N. Layadi Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringHalogen UptakeIntegrated CircuitsChemistryVacuum Device	1998	33
Plasma etching of submicron devices: in situ monitoring and control by multi-wavelength ellipsometry Helen Maynard, N. Layadi, J.T.C. Lee Thin Solid Films EngineeringElectron-beam LithographyPhysicsMicrofabricationBeam Lithography	1998	32
<i>In</i> <i>situ</i> measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposure H. C. Neitzert, N. Layadi, P. Roca i Cabarrocas, Journal of Applied Physics EngineeringPlasma PhysicsExcess Charge-carrier KineticsSilicon On InsulatorPlasma Processing	1995	31

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