H. Burkhard - Concepedia

Author

H. Burkhard

Also Known As

H Burkhard, H. BURKHARD, H. Burkhard, H. Burkhard H. Burkhard, Herbert Burkhard, Herbert Burkhard Herbert Burkhard, S. Hansmann

142

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Deutsche Telekom (Germany)Deutsche Bundespost Johannes Kepler University of Linz Technische Universität Berlin RWTH Aachen University

About

H. Burkhard is an author at Deutsche Telekom (Germany) specializing in engineering, applied physics, and optical properties.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	38	1.2K
2	Applied Physics	18	26	940
3	Natural Sciences	7	7	266
4	Medicine	1	1	24
5	Chemical Engineering	1	1	28

H. Burkhard

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Optical properties of In1−<i>x</i>Ga<i>x</i>P1−<i>y</i>As<i>y</i>, InP, GaAs, and GaP determined by ellipsometry H. Burkhard, H.W. Dinges, E. Kuphal Journal of Applied Physics Optical MaterialsEngineeringOptical TestingLaser ApplicationsGaas Samples	1982	181
Chirp reduction of directly modulated semiconductor lasers at 10 Gb/s by strong CW light injection S. Mohrdiek, H. Burkhard, H. Walter Journal of Lightwave Technology PhotonicsOptical MaterialsEngineeringLaser ScienceOptical Transmission System	1994	111
10 Gbit/s all-optical Boolean XOR with SOA fibreSagnac gate T. Houbavlis, Kyriakos E. Zoiros, Antonios Hatziefremidis, Electronics Letters	1999	101
Band-population effects and intraband magneto-optical properties of a many-valley semiconductor: PbTe H. Burkhard, G. Bauer, W. Zawadzki Physical review. B, Condensed matter EngineeringFaraday ConfigurationMagnetic ResonanceMagnetic MaterialsMagnetoresistance	1979	66
Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine G. Haacke, S. P. Watkins, H. Burkhard Applied Physics Letters	1989	62
Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry H.W. Dinges, H. Burkhard, R. Lösch, Applied Surface Science PhotonicsEngineeringPhysicsOptical PropertiesSpectroscopy	1992	52
Non-equilibrium behaviour of the two-dimensional electron gas in the quantized Hall resistance regime of GaAs/Al0.3Ga0.7As F. Kuchar, G. Bauer, G. Weimann, Surface Science Two-dimensional Electron GasCategoryquantum ElectronicsNon-equilibrium BehaviourEngineeringPhysics	1984	49
Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium G. Haacke, S. P. Watkins, H. Burkhard Applied Physics Letters SemiconductorsHall MobilitiesElectrical EngineeringLiquid-nitrogen HallEngineering	1990	45
10-Gb/s standard fiber transmission using directly modulated 1.55-μm quantum-well DFB lasers S. Mohrdiek, H. Burkhard, F. Steinhagen, IEEE Photonics Technology Letters PhotonicsEngineeringOptical AmplificationOptical Transmission SystemWavelength Tuning	1995	43
All-optical XOR in a semiconductor optical amplifier-assisted fiber Sagnac gate T. Houbavlis, Kyriakos E. Zoiros, Kyriakos Vlachos, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringAll-optical XorSemiconductor Optical AmplifierOptical Amplification	1999	43

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