E. G. Yeo

Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte

Jen‐Wei Huang, Luping Shi, E. G. Yeo et al. · IEEE Electron Device Letters · 2011 · 27 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

Parasitic capacitance effect on programming performance of phase change random access memory devices

E. G. Yeo, Lu Shi, Ruixue Zhao et al. · Applied Physics Letters · 2010 · 15 citations

Hardware Security, Parasitic Capacitance Effect, Electrical Engineering +14

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

Lina Fang, Rong Zhao, E. G. Yeo et al. · Journal of The Electrochemical Society · 2011 · 14 citations

A ZnTaOx Based Resistive Switching Random Access Memory

Kun Zheng, Jianlin Zhao, Kheng Swee Leck et al. · ECS Solid State Letters · 2014 · 10 citations · Full text