High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

Y.-S. Wu, J.-W. Shi, Jia Wu, +4

IEEE Photonics Technology Letters

1.55-/Spl Mu/m WavelengthOptical MaterialsEngineeringOptoelectronic DevicesPhotoelectric Sensor +16

High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Hsien‐Chin Chiu, Yi-Sheng Chang, Bohong Li, +5

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringRon Uniformity ControlEngineeringNanoelectronics +8

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

Hsien‐Chin Chiu, Yi-Sheng Chang, Bohong Li, +4

IEEE Journal of the Electron Devices Society

SemiconductorsSemiconductor TechnologyElectrical EngineeringP-gallium NitrideEngineering +6

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi-Keng Fu, Ren-Hao Jiang, Yu-Hsuan Lu, +6

Applied Physics Letters

EngineeringAlingan/ingan LedsTrimethylgallium FlowsOptical PropertiesLight-emitting Diodes +15

Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Kuang‐Po Hsueh, Yi-Sheng Chang, Bohong Li, +4

Materials Science in Semiconductor Processing

Wide-bandgap SemiconductorElectrical EngineeringEngineeringDual Anode MetalApplied Physics +4

Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Yu‐Hsuan Lu, Yi‐Keng Fu, Shyh-Jer Huang, +3

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringConventional EblElectron LeakagePolarization Effect +14

Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates

Chu‐Li Chao, Rong Xuan, Hsi‐Hsuan Yen, +10

IEEE Photonics Technology Letters

EngineeringOptoelectronic DevicesQuantum EngineeringSemiconductorsGrown Leds +16

Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

Yi‐Keng Fu, Bo-Chun Chen, Yen‐Hsiang Fang, +8

IEEE Photonics Technology Letters

White OledElectrical EngineeringGan SubstrateEngineeringSolid-state Lighting +13

Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate

Hsien‐Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, +4

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringResistant Algan +10

RF Performance of <italic>In Situ</italic> SiN_{<italic>x</italic>}Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Hsien‐Chin Chiu, Hou-Yu Wang, Li-Yi Peng, +4

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringRf PerformanceIntegrated CircuitsSemiconductor Device +14