Yi-Keng Fu

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi-Keng Fu, Ren-Hao Jiang, Yu‐Hsuan Lu et al. · Applied Physics Letters · 2011 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Chia‐Yen Huang, Sebastian Walde, Chia-Lung Tsai et al. · Japanese Journal of Applied Physics · 2020 · 26 citations

Engineering, Materials Engineering, Materials Science +17

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Chia‐Yen Huang, Chia‐Yen Huang, Chia-Lung Tsai et al. · Applied Physics Letters · 2020 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Yu‐Hsuan Lu, Yi-Keng Fu, Shyh-Jer Huang et al. · Journal of Applied Physics · 2014 · 13 citations

Engineering, Electrical Engineering, Materials Science +17