V. Babentsov - Concepedia

Author

V. Babentsov

Also Known As

Babentsov, V., V Babentsov, V N Babentsov, V. Babentsov, V. N. Babentsov, V.N. Babentsov, Vladimir Babentsov, Vladimir N. Babentsov, v. Babentsov

Publications

848

Citations

H-Index

Concepts

All Affiliations

University of Freiburg FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic Charles University Brookhaven National Laboratory V.E. Lashkaryov Institute of Semiconductor Physics

About

V. Babentsov is an author at University of Freiburg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	685
2	Applied Physics	17	24	698
3	Chemistry	6	6	96
4	Electrical Engineering	3	3	162
5	Natural Sciences	1	1	14

V. Babentsov

Publications

729

Citations

H-Index

Page 1

	Year	Citations
Growth of high resistivity CdTe and (Cd,Zn)Te crystals M. Fiederle, V. Babentsov, J. Franc, Crystal Research and Technology EngineeringCrystal Growth TechnologySemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	2003	80
Defects in quantum dots of IIB–VI semiconductors V. Babentsov Opto-Electronics Review EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	2008	60
Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector Crystals M. Fiederle, A. Fauler, J.‐P. Konrath, IEEE Transactions on Nuclear Science Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringPhysics	2004	58
Defect structure of Ge-doped CdTe M. Fiederle, V. Babentsov, J. Franc, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringApplied Physics	2002	52
Deep level defect luminescence in cadmium selenide nano-crystals films V. Babentsov, Jürgen Riegler, Julian Schneider, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringApplied Physics	2005	46
Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor V. Babentsov, J. Franc, R. B. James Applied Physics Letters Charge ExcitationsEngineeringCharge TransportSemiconductorsIi-vi Semiconductor	2009	32
Dewetted growth and characterisation of high-resistivity CdTe M. Fiederle, T. Duffar, J.P. Garandet, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringSpecific Resistance	2004	32
Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances V. Babentsov, J. Franc, P. Höschl, Crystal Research and Technology EngineeringPhotoconductivity SignalSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	2009	32
Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe V. Babentsov, Vitalii Boiko, G.A. Schepelskii, Journal of Luminescence Materials ScienceIi-vi SemiconductorPhotoluminescenceDislocation-induced Electronic LevelsEngineering	2010	28
Compensation of CdTe by Doping With Gallium V. Babentsov, V. Corregidor, J. L. Castaño, Crystal Research and Technology Ii-vi SemiconductorEngineeringPhysicsIntrinsic ImpurityApplied Physics	2001	28

Page 1