Defects in quantum dots of IIB–VI semiconductors

Abstract

Abstract This review discusses the properties of structural defects in quantum dots of IIB–VI semiconductors. A great part of this knowledge has been developed in the last years and combined with the improvement in passivation technologies has contributed significantly to the nanotechnology. In this review we introduced the main characterization methods which are used for the study of defects in the nanoform of semiconductors, presented a short description of how native defects can influence the emission spectra, underlined the restrictions which the Auger and deep-level defect recombination imposes on the excitonic emission. We also highlighted the importance of the defect passivation associated with efficiency and photostability of devices.