Kap‐Soo Yoon

42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

Je‐hun Lee, D. G. Kim, Dongju Yang et al. · SID Symposium Digest of Technical Papers · 2008 · 248 citations

Engineering, Electrical Engineering, Materials Science +13

Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors

Sun-Jae Kim, Soo‐Yeon Lee, Young‐Wook Lee et al. · Japanese Journal of Applied Physics · 2011 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping

Myung Soo Huh, Bong Seop Yang, Seung Ha Oh et al. · Electrochemical and Solid-State Letters · 2009 · 22 citations

Engineering, Materials Engineering, Materials Science +17

Influence of Spin-Polarized Current on Superconductivity and the Realization of Large Magnetoresistance

Guo‐Xing Miao, Kap‐Soo Yoon, Tiffany Santos et al. · Physical Review Letters · 2007 · 20 citations

Natural Sciences, Materials Science, Physics +16

Effect of Ti∕Cu Source∕Drain on an Amorphous IGZO TFT Employing SiNx Passivation for Low Data-Line Resistance

Young‐Wook Lee, Sun-Jae Kim, Soo‐Yeon Lee et al. · Electrochemical and Solid-State Letters · 2012 · 20 citations

Natural Sciences, Electrical Engineering, Materials Science +17