Youn-Joo Hyun - Concepedia

Author

Youn-Joo Hyun

TU Wien

Also Known As

Y J Hyun, Y. J. Hyun, Y.-J. Hyun, Y.J. Hyun, Youn-Joo Hyun

Publications

401

Citations

H-Index

Concepts

All Affiliations

TU Wien

About

Youn-Joo Hyun is an author at TU Wien specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	187
2	Applied Physics	5	5	187
3	Electrical Engineering	2	2	97
4	Chemistry	1	1	47
5	Materials Engineering	1	1	33

Youn-Joo Hyun

Publications

371

Citations

H-Index

Page 1

	Year	Citations
Pressure-Induced Orientation Control of the Growth of Epitaxial Silicon Nanowires Alois Lugstein, Mathias Steinmair, Youn-Joo Hyun, Nano Letters	2008	99
Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors T. Burchhart, Alois Lugstein, Youn-Joo Hyun, Nano Letters Materials ScienceElectrical EngineeringEngineeringPhysicsCopper-germanide/germanium Nanowire	2009	63
Ultrafast VLS growth of epitaxial β- Ga<sub>2</sub>O<sub>3</sub>nanowires Erwin Auer, Alois Lugstein, Stefan Löffler, Nanotechnology Materials ScienceEngineeringNanomaterialsNanotechnologySurface Science	2009	47
Orientation specific synthesis of kinked silicon nanowires grown by the vapour–liquid–solid mechanism Youn-Joo Hyun, Alois Lugstein, Mathias Steinmair, Nanotechnology	2009	41
Growth of branched single-crystalline GaAs whiskers on Si nanowire trunks Alois Lugstein, A. M. Andrews, Mathias Steinmair, Nanotechnology Core Si NanowiresSix-fold SymmetryEngineeringOptoelectronic DevicesSemiconductor Nanostructures	2007	34
Ga ∕ Au alloy catalyst for single crystal silicon-nanowire epitaxy Alois Lugstein, Mathias Steinmair, Youn-Joo Hyun, Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductorsSilicon NanowiresEngineering	2007	33
Some aspects of substrate pretreatment for epitaxial Si nanowire growth Alois Lugstein, Youn-Joo Hyun, Mathias Steinmair, Nanotechnology	2008	29
High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts T. Burchhart, Clemens Zeiner, Youn-Joo Hyun, Nanotechnology	2010	15
Strain relaxation dependent island nucleation rates during the Stranski–Krastanow growth of GaN on AlN by molecular beam epitaxy Gregor Koblmüller, R. Averbeck, H. Riechert, Applied Physics Letters Materials ScienceStranski–krastanow GrowthAluminium NitrideEngineeringCrystalline Defects	2008	10

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