Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors

Abstract

In this letter, we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor-liquid-solid (VLS) grown Ge-NWs. The atomic scale aligned formation of the Cu3Ge segments is controlled by in situ SEM monitoring at 310 degrees C thereby enabling length control of the intrinsic Ge-NW down to a few nanometers. The single crystal Cu3Ge/Ge/Cu3Ge heterostructures were used to fabricate p-type Ge-NW field effect transistors with Schottky Cu3Ge source/drain contacts. Temperature dependent I /V measurements revealed the metallic properties of the Cu3Ge contacts with a maximum current density of 5 x 10(7) A/cm2. According to the thermoionic emission theory, we determined an effective Schottky barrier height of 218 meV.