B. G. Svensson

Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence

B. G. Svensson, C. Jagadish, J. S. Williams · Physical Review Letters · 1993 · 63 citations

Point Defects, Engineering, Ion Beam Instrumentation +16

The influence of ion flux on defect production in MeV proton-irradiated silicon

Anders Hallén, David Fenyö, B. Sundqvist et al. · Journal of Applied Physics · 1991 · 62 citations

Engineering, Nuclear Physics, Protons Cm−2 +16

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

J. L. Lindström, Tomas Hallberg, B. G. Svensson et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2002 · 55 citations

Materials Science, Materials Engineering, Different Temperatures +9

Nickel atomic diffusion in amorphous silicon

A. Yu. Kuznetsov, B. G. Svensson · Applied Physics Letters · 1995 · 52 citations

Materials Science, Engineering, Diffusion Resistance +10

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

M. K. Linnarsson, Martin S. Janson, U. Zimmermann et al. · Applied Physics Letters · 2001 · 46 citations · Full text

Materials Science, Materials Engineering, High Temperature Materials +12