J. C. Vaissière

Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximations

J. P. Nougier, J. C. Vaissière, D. Gasquet et al. · Journal of Applied Physics · 1981 · 102 citations · Full text

Engineering, Semiconductor Device, Semiconductors +22

Transfer-field methods for electronic noise in submicron semiconductor structures

P. Shiktorov, E. Starikov, V. Gruz̆inskis et al. · Rivista Del Nuovo Cimento · 2001 · 40 citations

Engineering, Physics, Applied Physics +4

Monte Carlo simulation of the generation of terahertz radiation in GaN

E. Starikov, P. Shiktorov, V. Gruz̆inskis et al. · Journal of Applied Physics · 2001 · 39 citations

Thz Photonics, Terahertz Technology, Engineering +19

Numerical solution of coupled steady-state hot-phonon–hot-electron Boltzmann equations in InP

J. C. Vaissière, J. P. Nougier, M. Fadel et al. · Physical review. B, Condensed matter · 1992 · 29 citations

Numerical Analysis, Engineering, Numerical Solution +16

Monte Carlo Simulation of Schottky Diodes Operating Under Terahertz Cyclostationary Conditions

P. Shiktorov, E. Starikov, V. Gruz̆inskis et al. · IEEE Electron Device Letters · 2004 · 29 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15