G.T. Jeong

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 139 citations

Engineering, Electrical Engineering, Materials Science +10

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

In-Hwan Baek, Chanyeol Park, Hyunsu Ju et al. · 2011 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +17

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +14

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

Youjian Song, Ji‐Hyun Lee, Hee-Won Shin et al. · 2016 · 96 citations

Engineering, Electrical Engineering, Materials Science +13

1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

Kyoobin Lee, J. Bąk, Yeonji Kim et al. · 2019 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +17