I. S. T. Tsong

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

J. Tolle, A. V. G. Chizmeshya, Yunnan Fang et al. · Applied Physics Letters · 2006 · 87 citations

Materials Science, Materials Engineering, Reactive Sih2 Groups +13

Electronic structures of polar and nonpolar GaN surfaces

Meng‐Hao Tsai, Otto F. Sankey, K. E. Schmidt et al. · Materials Science and Engineering B · 2002 · 34 citations

Engineering, Physics, Surface Science +4

Surface reconstructions induced by thin overlayers of indium on Si(111)

D. M. Cornelison, C. S. Chang, I. S. T. Tsong · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 26 citations

Impact Collision Ion, Engineering, Nuclear Physics +16

Stoichiometric and non-stoichiometric films in the Si–O–N system: mechanical, electrical, and dielectric properties

L. Torrison, J. Tolle, John Kouvetakis et al. · Materials Science and Engineering B · 2002 · 25 citations

Materials Science, Dielectric Properties, Engineering +7

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Qi-Kun Xue Qi-Kun Xue, Qi-Zhen Xue Qi-Zhen Xue, Yukio Hasegawa et al. · Japanese Journal of Applied Physics · 1997 · 21 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20