Joe Pellegrino

Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

Binh Minh Nguyen, Darin Hoffman, Pierre-Yves Delaunay et al. · Applied Physics Letters · 2008 · 77 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Bond-Length Distortions in Strained Semiconductor Alloys

J. C. Woicik, Joe Pellegrino, B. Steiner et al. · Physical Review Letters · 1997 · 72 citations

Materials Science, Thein-as Bond Length, Engineering +14

Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes

Darin Hoffman, Binh Minh Nguyen, Pierre-Yves Delaunay et al. · Applied Physics Letters · 2007 · 53 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

The effect of doping the M-barrier in very long-wave type-II InAs∕GaSb heterodiodes

Darin Hoffman, Binh Minh Nguyen, Edward Kwei-wei Huang et al. · Applied Physics Letters · 2008 · 37 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

J. C. Woicik, K. E. Miyano, Joe Pellegrino et al. · Applied Physics Letters · 1996 · 24 citations

Semiconductors, Materials Science, Electrical Engineering +14