Tetsuro Ishiguro

New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor

Tetsuro Ishiguro, Atsushi Yamada, Junji Kotani et al. · Japanese Journal of Applied Physics · 2013 · 26 citations

Engineering, Materials Engineering, Materials Science +17

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro et al. · Applied Physics Letters · 2016 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures

Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro et al. · physica status solidi (a) · 2016 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Atsushi Yamada, Tetsuro Ishiguro, Junji Kotani et al. · Japanese Journal of Applied Physics · 2017 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

Large-range tuning and stabilization of the optical transition of diamond tin-vacancy centers by <i>in situ</i> strain control

Julia M. Brevoord, Leonardo G. C. Wienhoven, Nina Codreanu et al. · Applied Physics Letters · 2025 · 10 citations · Full text

Engineering, Electrical Engineering, Materials Science +16