X.Z. Shang

Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy

Shuang Wu, L.W. Guo, Zilong Li et al. · Journal of Crystal Growth · 2005 · 25 citations

Electrical Engineering, Epitaxial Growth, Engineering +8

Effect of annealing temperature on density of ZnO quantum dots

L. Chen, Zhiquan Chen, X.Z. Shang et al. · Solid State Communications · 2006 · 21 citations

Materials Science, Ii-vi Semiconductor, Engineering +10

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Shuang Wu, L.W. Guo, Wei Wang et al. · Journal of Crystal Growth · 2004 · 17 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +9

Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

X.Z. Shang, Shuai Wu, C Liu et al. · Journal of Physics D Applied Physics · 2006 · 16 citations

Semiconductors, Materials Science, Engineering +10

Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures

X.Z. Shang, Jing Wu, W.C. Wang et al. · Solid-State Electronics · 2007 · 11 citations

Electrical Engineering, Photoluminescence, Engineering +2