Publication | Closed Access
Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy
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Citations
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References
2005
Year
Electrical EngineeringEpitaxial GrowthEngineeringNanoelectronicsApplied PhysicsMolecular Beam EpitaxyMicroelectronicsOptoelectronicsInsb GrownCompound SemiconductorLow-temperature Buffer Thickness
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