Avinash S. Kashyap

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans et al. · IEEE Transactions on Power Electronics · 2007 · 329 citations

Engineering, Power Conversion, Energy Efficiency +16

Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

John Glaser, Jeffrey Nasadoski, Peter A. Losee et al. · 2011 · 92 citations

Electrical Engineering, Semiconductor Device, Engineering +12

A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes

Burak Ozpineci, Madhu Chinthavali, Leon M. Tolbert et al. · IEEE Transactions on Industry Applications · 2009 · 90 citations

Circuit Simulators, Electrical Engineering, Sic Schottky Diodes +14

Silicon carbide integrated circuits for extreme environments

Avinash S. Kashyap, Cheng-Po Chen, Reza Ghandi et al. · 2013 · 34 citations

Engineering, Education, Integrated Circuits +19

SiC JFET dc characteristics under extremely high ambient temperatures

Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans et al. · IEICE Electronics Express · 2004 · 27 citations · Full text

Room Temperature, Electrical Engineering, Semiconductor Device +15