T. K. Higman

Mechanisms of surface anodization produced by scanning probe microscopes

Adrian Gordon, R. T. Fayfield, D. D. Litfin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 138 citations

Engineering, Electrolyte Anodization Process, Microscopy +21

New ultrafast switching mechanism in semiconductor heterostructures

K. Hess, T. K. Higman, M.A. Emanuel et al. · Journal of Applied Physics · 1986 · 86 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

T. K. Higman, J.M. Higman, M.A. Emanuel et al. · Journal of Applied Physics · 1987 · 28 citations · Full text

Semiconductor Technology, Theoretical Analysis, Electrical Engineering +13

Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman, L. M. Miller, M. E. Favaro et al. · Applied Physics Letters · 1988 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Structural analysis of Au–Ni–Ge and Au–Ag–Ge alloyed ohmic contacts on modulation-doped AlGaAs–GaAs heterostructures

T. K. Higman, M.A. Emanuel, J. J. Coleman et al. · Journal of Applied Physics · 1986 · 22 citations

Materials Science, Aluminium Nitride, Electrical Engineering +13