Dmitrii V. Denisov

High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

S. A. Blokhin, A. V. Babichev, A. G. Gladyshev et al. · IEEE Journal of Quantum Electronics · 2022 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

S. A. Blokhin, A. V. Babichev, A. G. Gladyshev et al. · Electronics Letters · 2021 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

A. V. Babichev, S. A. Blokhin, A. G. Gladyshev et al. · IEEE Photonics Technology Letters · 2023 · 23 citations

Engineering, Electrical Engineering, Materials Science +15

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

S. A. Blokhin, A. V. Babichev, A. G. Gladyshev et al. · Optical Engineering · 2022 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix

M. A. Kaliteevski, E. V. Nikitina, Dmitrii V. Denisov et al. · physica status solidi (b) · 2016 · 12 citations

Engineering, Materials Science, Physics +17