Xiaojiao Fan

The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

Chenxi Fei, Hongxia Liu, Xing Wang et al. · Nanoscale Research Letters · 2015 · 22 citations · Full text

Engineering, Thin Film Process Technology, Chemical Deposition +17

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Xing Wang, Hongxia Liu, Chenxi Fei et al. · Nanoscale Research Letters · 2015 · 17 citations · Full text

Enhancement-mode Al₂O₃/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

Shenglei Zhao, JunShuai Xue, Peng Zhang et al. · Applied Physics Express · 2014 · 16 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Identification of optimal ALD process conditions of Nd2O3 on Si by spectroscopic ellipsometry

Xiaojiao Fan, Hongxia Liu, Xujie Zhang · Applied Physics A · 2013 · 13 citations

Materials Science, Materials Engineering, Aluminium Nitride +9

Effect of post-deposition annealing on the interfacial chemical bonding states and band alignment of atomic layer deposited neodymium oxide on silicon

Xiaojiao Fan, Hongxia Liu, Chenxi Fei · Materials Research Express · 2014 · 11 citations

Optical Materials, Engineering, Band Offset +22