JunShuai Xue

Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility

FanNa Meng, Jincheng Zhang, Hao Zhou et al. · Journal of Applied Physics · 2012 · 53 citations

Materials Science, Semiconductors, Electrical Engineering +13

High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

JunShuai Xue, Yue Hao, Xiaowei Zhou et al. · Journal of Crystal Growth · 2010 · 49 citations

Materials Science, Materials Engineering, Engineering +6

Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

JunShuai Xue, Yue Hao, Jincheng Zhang et al. · Applied Physics Letters · 2011 · 39 citations

Materials Science, Semiconductors, Electrical Engineering +12

Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

JunShuai Xue, Jincheng Zhang, YaoWei Hou et al. · Applied Physics Letters · 2012 · 38 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

Jun-Cai Ma, Jincheng Zhang, JunShuai Xue et al. · Journal of Semiconductors · 2012 · 36 citations · Full text

Wide-bandgap Semiconductor, Improved Breakdown Voltage, Electrical Engineering +8