M. Ohmori - Concepedia

Author

M. Ohmori

NTT (Japan)

Also Known As

M Ohmori, M. Ohmori, Misako OHMORI

Publications

615

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)Japan Petroleum Energy Center

About

M. Ohmori is an author at NTT (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	18	351
2	Electrical Engineering	11	18	351
3	Applied Physics	10	12	292
4	Computer Engineering	4	4	61
5	Health Sciences	2	2	116

M. Ohmori

Publications

525

Citations

H-Index

Page 1

	Year	Citations
High quality CdTe and its application to radiation detectors M. Ohmori, Y. Iwase, Ryoichi Ohno Materials Science and Engineering B Radiation DetectionHigh Quality CdteRadiation ApplicationInstrumentationNuclear Medicine	1993	66
C.W. oscillation with <i>p</i> <sup>+</sup> - <i>p</i> - <i>n</i> <sup>+</sup> silicon IMPATT diodes in 200 GHz and 300 GHz bands M. Ino, Tadao Ishibashi, M. Ohmori Electronics Letters	1976	58
Structural optimization for single junction InGaP solar cells Tatsuya Takamoto, Eiji Ikeda, Hiroshi Kurita, Solar Energy Materials and Solar Cells Electrical EngineeringEngineeringOrganic Solar CellApplied PhysicsBuilding-integrated Photovoltaics	1994	51
Thermal treatment of CdTe surfaces for radiation detectors Tsutomu Ozaki, Y. Iwase, Hitoshi Takamura, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Thermal TreatmentRadiation DetectionPhysicsApplied PhysicsRadiation Application	1996	50
Improved junction formation procedure for low temperature deposited solar cells Tatsuya Takamoto, Takaaki Agui, Hiroshi Kurita, Solar Energy Materials and Solar Cells Materials ScienceElectrical EngineeringEngineeringOrganic Solar CellJunction Formation Procedure	1997	39
A 90 element CdTe array detector Y. Iwase, Minoru Funaki, A. Onozuka, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Electrical EngineeringEngineeringSensor ArrayComputer EngineeringInstrumentation	1992	29
200-GHz 50-mW CW Oscillation with Silicon SDR IMPATT (Short Papers) Tadao Ishibashi, M. Ohmori IEEE Transactions on Microwave Theory and Techniques P+-n Junction StructureElectrical EngineeringIon ImplantationEngineeringRf Semiconductor	1976	26
Frequency Triplers and Quadruplers with GaAs Schottky-Barrier Diodes at 450 and 600 GHz T. Takada, M. Ohmori IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringMillimeter Wave TechnologyGaas Schottky-barrier DiodesSubmillimeter-wave Solid-state SourcesEngineering	1979	26
High efficiency InGaP solar cells for InGaP/GaAs tandem cell application Tatsuya Takamoto, Eiji Ikeda, Hiroshi Kurita, Electrical EngineeringIngap CellsEngineeringEnergy EfficiencyEnergy Conversion	2002	24
Dependency of the highest harmonic oscillation frequency on junction diameter of IMPATT diodes M. Ohmori, Tadao Ishibashi, Shintaro Ono IEEE Transactions on Electron Devices Impatt DiodesElectrical EngineeringEngineeringRf SemiconductorPhysics	1977	23

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